Illustration: At the counter of an electronic parts shop, a customer points at the letters Isat on a datasheet and asks, "How do you read this?" A female clerk in a red apron smiles and answers, "I-sat! Saturation current."
Datasheets and quotes for semiconductors and electronic components are full of rated values with units, such as 100nF · 4.7μF · 10kΩ · 20mΩ · 16.000MHz · ±20ppm · 62.5℃/W. These units are used throughout electrical and electronic engineering, but component specs have their own settled conventions for magnitudes, symbols and abbreviations, which makes them confusing at first sight.
A spec unit consists of two parts: a prefix letter (magnitude) + a unit symbol (what is being measured). Once you know these two, you can read even values you have never seen before. This post collects every unit that has appeared so far in the Semiconductor Library "How to Read" posts and in Today's Part, and also covers units and symbols that appear often in component specs but are easy to confuse.
In each table, the bold text in the "How to read" column is how you actually say it out loud. Units are read by their full names (millivolt, microfarad), and symbols made of strung-together letters such as Isat · VRRM · RDS(on) are read letter by letter (I-sat · V-R-R-M · R-D-S-on). "/" is read "per". Words in parentheses are the shorthand used on the shop floor.
| Letter | How to read | Multiplier | Example |
|---|---|---|---|
| p | pico | 0.000000000001 (10⁻¹²) | 22pF |
| n | nano | 0.000000001 (10⁻⁹) | 100nF · 35ns |
| μ (u) | micro (written u) | 0.000001 (10⁻⁶) | 4.7μF · 5μA |
| m | milli | 0.001 (10⁻³) | 200mA · 20mΩ |
| (none) | — | 1 | 5V · 1A |
| k | kilo | 1,000 (10³) | 10kΩ · 65kHz |
| M | mega | 1,000,000 (10⁶) | 1MΩ · 16MHz |
| G | giga | 1,000,000,000 (10⁹) | 2.4GHz |
μ (micro) is hard to type on a keyboard, so datasheets, quotes and stock spreadsheets often write it as u. Read uF = μF, uA = μA, uH = μH. Very old documents sometimes use mfd · mF to mean μF, so for capacitors, judge by the magnitude.
The most common mistake is m (milli) vs. M (mega). Lowercase m is one-thousandth and uppercase M is one million times, so 20mΩ (0.02Ω, a FET's on-resistance) and 20MΩ (20 million Ω) differ by a factor of one billion. Always read upper and lower case carefully.
| Notation | How to read | Where you often see it in datasheets |
|---|---|---|
| V | volt | VCC · VDD (supply), VIN (input), VOUT (output) — e.g. 5V regulator |
| mV | millivolt (0.001V) | Voltage differences and noise — e.g. diode VF difference, output ripple 20mV |
| kV | kilovolt (1000V) | Static (ESD) withstand — e.g. ±8kV (contact discharge) |
| VRRM | V-R-R-M Repetitive peak reverse voltage | Diodes — 1N4007 is 1000V |
| VF | V-F Forward voltage | Voltage across a diode or LED when it turns on — e.g. 0.5V (Schottky), 1.1V (standard) |
| VDS · VCEO | V-D-S · V-C-E-O FET / transistor withstand voltage | VDS for FETs, VCEO for BJTs — e.g. 2N3904 40V |
| VDC · VAC | V-D-C · V-A-C DC · AC | Capacitor and fuse ratings — e.g. 50VDC |
| Vrms · Vp-p | V-R-M-S · V-P-P (peak-to-peak) RMS value · from top to bottom | Size of AC and noise — for the same signal, Vp-p is larger |
A part's maximum voltage (Absolute maximum) is the value that destroys it if exceeded, while the recommended operating voltage (Recommended operating) is the range you actually use. For capacitors it is normal to choose a rating with plenty of margin over the working voltage (e.g. 16V or 25V for a 5V circuit). Capacitor voltage markings are covered in How to Read Electrolytic & Tantalum Capacitor Markings,
https://eguro.kr/en/board/view.html?b=library&id=88, and diode voltages in How to Read Diode Part Numbers.
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| Notation | How to read | Where you often see it in datasheets |
|---|---|---|
| A | ampere (amp for short) | Current a diode, FET or regulator can carry — e.g. 1A, 3A |
| mA | milliampere (milliamp) (0.001A) | Small parts, LEDs, signals — e.g. 2N3904 IC 200mA, LED 20mA |
| μA | microampere (microamp) (0.000001A) | Quiescent and leakage current — e.g. regulator quiescent current 5μA |
| nA | nanoampere | Very small leakage and input currents — op-amp input current, etc. |
| IF(AV) | I-F-A-V (I-F average) Average forward current | Current a diode can carry continuously — e.g. SS34 3A |
| IFSM | I-F-S-M Non-repetitive surge current | Large current withstood once at switch-on — e.g. 1N4007 30A |
| ID · IC | I-D · I-C FET drain current · BJT collector current | Maximum current a part can carry |
| IQ · ICC | I-Q · I-C-C Quiescent (supply) current | Current the part itself consumes — important in battery products |
| IR | I-R Reverse leakage current | Current that leaks while a diode is blocking — usually μA |
Current ratings decrease with temperature. The 3A in a datasheet is usually the value at 25℃ or under specified board conditions, so in hot places you must run less current. For a detailed example, see the ID explanation in How to Read FET (MOSFET) Part Numbers.
https://eguro.kr/en/board/view.html?b=library&id=56
| Notation | How to read | Example |
|---|---|---|
| Ω | ohm | 100Ω · 470Ω |
| mΩ | milliohm (0.001Ω) | FET on-resistance RDS(on) 20mΩ, current-sense resistor 10mΩ |
| kΩ | kilohm ("K" for short) (1000Ω) | 10kΩ(103) · 4.7kΩ(472) |
| MΩ | megohm ("meg" for short) (1,000,000Ω) | 1MΩ (105) — insulation resistance goes up to GΩ |
| RDS(on) | R-D-S-on FET on-resistance | The smaller, the less heat — in mΩ |
| ESR | E-S-R Equivalent series resistance | Resistance inside a capacitor — smaller is better, mΩ to Ω |
| Ω/sq | ohms per square Sheet resistance | Resistance of a thin film — occasionally in PCB and sensor documents |
Because the Ω symbol is hard to type, it is also written as ohm · R (10K, 10kohm and 10KR are all 10kΩ). How to convert the numbers on SMD resistors (103 · 4R7 · 01C) into Ω is explained in How to Read SMD Resistor Codes.
https://eguro.kr/en/board/view.html?b=library&id=57
| pF | nF | μF | Number code |
|---|---|---|---|
| 10pF | 0.01nF | 0.00001μF | 100 |
| 100pF | 0.1nF | 0.0001μF | 101 |
| 1,000pF | 1nF | 0.001μF | 102 |
| 10,000pF | 10nF | 0.01μF | 103 |
| 100,000pF | 100nF | 0.1μF | 104 |
| 1,000,000pF | 1,000nF | 1μF | 105 |
| 10,000,000pF | 10,000nF | 10μF | 106 |
Different companies and people write the same capacitor as 100nF, 0.1μF, 0.1uF or 104, so it is easy to miss in a stock search. They are all the same value. The capacitance code inside MLCC part numbers is covered in How to Read MLCC Part Numbers,
https://eguro.kr/en/board/view.html?b=library&id=48, and the 107 · 227 markings on electrolytic and tantalum capacitors in How to Read Electrolytic & Tantalum Capacitor Markings.
https://eguro.kr/en/board/view.html?b=library&id=88
The J · K · M at the end of a capacitor part number is not a unit but the tolerance (J ±5%, K ±10%, M ±20%). Here M does not mean mega, so don't mix them up.
Illustration: A quote on the counter has three lines: 100nF · 0.1uF · 104. When the customer asks, "Are all three different?", the female clerk holds up three fingers and answers, "They're all the same value!" A reel of capacitors sits next to them.
| Notation | How to read | Example |
|---|---|---|
| nH | nanohenry | High-frequency / RF inductors — 2.2nH · 10nH |
| μH | microhenry | Power (DC-DC) inductors — 4.7μH · 10μH · 22μH |
| mH | millihenry | Filters and choke coils — 1mH |
| Isat · Irms | I-sat · I-R-M-S Saturation current · thermal (heating) rated current | Current an inductor can carry — up to the smaller of the two |
| DCR | D-C-R DC resistance | Resistance of the inductor wire — mΩ |
Inductors use number codes just like resistors. The base unit is μH, so 100 = 10μH, 4R7 = 4.7μH, 101 = 100μH (small RF inductors are sometimes based on nH, so check the datasheet).
| Notation | How to read | Example |
|---|---|---|
| Hz | hertz (times per second) | Mains power 50Hz · 60Hz |
| kHz | kilohertz (1000Hz) | Watch crystal 32.768kHz, DC-DC switching 150kHz |
| MHz | megahertz ("meg" for short) (1,000,000Hz) | Crystals 8MHz · 16.000MHz, STM32 72MHz |
| GHz | gigahertz | Wi-Fi and Bluetooth 2.4GHz |
| Decimals after MHz | sixteen point zero-zero-zero megahertz Value written with precision | 16.000MHz = 16MHz — the decimals indicate precision |
For crystals, 16MHz, 16.000MHz and 16M are all the same frequency. Crystal frequency tolerance (ppm) and load capacitance (CL) are covered in How to Read Crystal & Oscillator Markings.
https://eguro.kr/en/board/view.html?b=library&id=90
| Notation | How to read | Example |
|---|---|---|
| W | watt (voltage × current) | TO-220 regulators, power devices |
| mW | milliwatt (0.001W) | Small transistor PD 625mW, 0603 resistor 100mW |
| PD · Ptot | P-D · P-total Maximum power dissipation | Power a part can handle as heat — decreases as temperature rises |
| 1/4W · 1/8W | one-quarter watt (quarter watt) · one-eighth watt Resistor power rating | 1/4W = 0.25W = 250mW |
Power is voltage × current. If 0.1A flows at 5V, that is 0.5W. For resistors it can also be calculated as current² × resistance. Running a part right at its rated power makes it hot, so a margin of about half is usual.
| Notation | How to read | Meaning |
|---|---|---|
| ℃ | degrees (degrees Celsius) Celsius | Operating temperature ranges such as −40~85℃ (industrial), 0~70℃ (commercial), −40~125℃ (automotive) |
| TA | T-A Ambient temperature | Temperature of the air around the part |
| TJ | T-J Junction temperature | Actual temperature inside the chip — usually max. 125℃ or 150℃ |
| TSTG | T-S-T-G Storage temperature | Temperature withstood while stored, not in use |
| ℃/W · K/W | degrees per watt · kelvin per watt (K per watt) Thermal resistance | How many ℃ it rises per 1W dissipated — the smaller, the better the heat escapes |
| RθJA · RθJC | R-theta-J-A · R-theta-J-C Junction→air · junction→case thermal resistance | E.g. 62.5℃/W means a 62.5℃ rise when dissipating 1W |
| K | kelvin | When talking about a temperature "difference", 1K = a 1℃ difference |
Thermal resistance lets you roughly estimate temperature. For example, if a part with an RθJA of 62.5℃/W dissipates 0.8W, it rises by 0.8 × 62.5 = 50℃, so with a 40℃ ambient the chip reaches about 90℃. For the temperature digit at the end of STM32 part numbers (6 · 7 · 3), see How to Read STM32 Part Numbers.
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| Notation | How to read | Example |
|---|---|---|
| ns | nanosecond (one-billionth of a second) | Diode reverse recovery time trr 35ns, logic IC delay tpd 10ns |
| μs | microsecond (one-millionth of a second) | Standard diode trr 2μs, reset pulse width |
| ms | millisecond (one-thousandth of a second) | Power-on time, surge test 8.3ms |
| s | second (sec) | Timers and delays |
| trr | T-R-R Reverse recovery time | Shorter for faster diodes (FR · UF · Schottky) |
| tr · tf | T-R · T-F Rise · fall time | Speed at which a signal changes |
| tpd | T-P-D Propagation delay | From an input change until the output changes |
FR (Fast) and UF (Ultra fast) in diode part numbers mean this trr is short. You can read more in How to Read Diode Part Numbers.
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| Notation | How to read | Example |
|---|---|---|
| % | percent (one hundredth) | Resistor tolerance ±1% (F) · ±5% (J), capacitor ±10% (K) |
| ppm | P-P-M (parts per million) (one millionth) | Crystal tolerance ±20ppm = ±0.002%, ±320Hz at 16MHz |
| ppm/℃ | P-P-M per degree Temperature coefficient | How much a value changes when temperature changes by 1℃ — resistor ±100ppm/℃ |
| dB | decibel (dee-bee) (a ratio on a log scale) | Gain and attenuation — +20dB is 10 times the voltage, −3dB is about 70% |
| dBm | D-B-M Decibels relative to 1mW | Wireless output — 0dBm = 1mW, 20dBm = 100mW |
| X7R · C0G | X-seven-R · C-zero-G Temperature characteristic codes | Grade of how MLCC capacitance changes with temperature — a grade, not a unit |
1% = 10,000ppm — very precise parts such as crystals give values in ppm instead of %. The X7R · X5R · C0G of MLCCs look like units but are temperature characteristic grades — see How to Read MLCC Part Numbers.
https://eguro.kr/en/board/view.html?b=library&id=48
| Inch code | Metric code | Actual size (mm) |
|---|---|---|
| 0201 | 0603 | 0.6 × 0.3 |
| 0402 | 1005 | 1.0 × 0.5 |
| 0603 | 1608 | 1.6 × 0.8 |
| 0805 | 2012 | 2.0 × 1.25 |
| 1206 | 3216 | 3.2 × 1.6 |
| 1210 | 3225 | 3.2 × 2.5 |
| Notation | How to read | Example |
|---|---|---|
| mm | millimeter ("mm") | Package size and lead spacing — SOT-23 2.9 × 1.3mm |
| mil | mil (one-thousandth of an inch = 0.0254mm) | PCB trace width, older documents — 100mil = 2.54mm |
| inch (in, ") | inch = 25.4mm | Reel diameter 7 inch · 13 inch |
| pitch | pitch Spacing between leads | 2.54mm(DIP), 1.27mm(SOIC), 0.5mm(QFN·LQFP) |
| μm | micrometer (micron) (0.001mm) | Plating thickness, etc. |
SMD size codes mix the American (inch) system and the Japanese/Korean manufacturers' (metric) system, so you cannot tell which one "0603" means from the number alone. Many companies use a two-digit code derived from the metric size for the size letters in MLCC part numbers (Samsung Electro-Mechanics CL10 · Murata GRM18 = 1608 metric = 0603 inch), while distributor stock lists often use inch codes. You can compare the actual sizes with drawings in Component Package Names: A Complete Guide.
https://eguro.kr/en/board/view.html?b=library&id=59
| Notation | How to read | Example |
|---|---|---|
| bit (b) | bit — a single 0 or 1 | Memory ICs are mostly given in bits |
| Byte (B) | byte = 8bit | MCU flash and RAM are given in bytes |
| Kbit · Kb | kilobit (K-bit) (1024bit) | EEPROM 24C02 = 2Kbit = 256Byte |
| KB | kilobyte (K-byte) (1024Byte) | STM32F103C8 flash 64KB |
| Mbit · MB | megabit · megabyte | SPI flash W25Q64 = 64Mbit = 8MB |
| bps · Mbps | B-P-S · mega-B-P-S Bits sent per second | UART 115200bps, CAN 1Mbps, USB 12Mbps |
| baud | baud Baud (signal changes per second) | In UART it is used with the same meaning as bps |
Lowercase b is bit, uppercase B is byte. The numbers in memory IC part numbers are mostly in bits, so a 64Mbit chip is 8MB. MCU flash is given in bytes — see the flash letter table in How to Read STM32 Part Numbers.
https://eguro.kr/en/board/view.html?b=library&id=87
IC datasheets have many units made of two units joined by a / (slash). Just read / as "per". mV/℃ means "how many mV it changes per 1℃", and V/μs means "how many V it changes per 1μs". Most of them express how much one value changes with another condition (rate of change, coefficient); the smaller, the more stable the part.
| Unit | How to read · Meaning | Datasheet example |
|---|---|---|
| %/V | percent per volt How many % the output changes per 1V of input voltage (line regulation) | LM317 0.01%/V |
| mV/V | millivolts per volt How many mV it changes per 1V of voltage | TL431 −1.4mV/V (reference voltage change with cathode voltage) |
| mV/℃ | millivolts per degree How many mV it changes per 1℃ (temperature drift) | L7805CV output −1.1mV/℃ · BC817 VBE about 2mV/K |
| μV/℃ | microvolts per degree How many μV per 1℃ — a very small drift | LM358 input offset 3.5μV/℃ |
| pA/℃ | picoamps per degree How many pA per 1℃ | LM358 input offset current 10pA/℃ |
| V/μs | volts per microsecond How many V the output can move in 1μs (slew rate) | LM358 0.5V/μs |
| nV/√Hz | nanovolts per root hertz Noise density — noise level per unit of bandwidth | LM358 40nV/√Hz (1kHz) |
| dB | decibel (dee-bee) Ratio — how much input supply ripple is suppressed (SVR · PSRR) | L7805CV 68dB (120Hz) |
| mVpp · μVrms | millivolts peak-to-peak · microvolts RMS Size of output ripple and noise | LM2596 output ripple 62mVpp (example calculation) |
| ppm/V · ppm/℃ | P-P-M per volt · P-P-M per degree Parts per million per 1 unit of voltage or temperature | STM32 internal reference voltage coefficient, NE555 timing temperature coefficient |
| Unit | How to read · Meaning | Datasheet example |
|---|---|---|
| mW/℃ · mW/K | milliwatts per degree · milliwatts per kelvin How many mW the allowable power drops for every 1℃ rise (derating) | MAX485 SO8 derates by 5.88mW/℃ above 70℃ (471mW) · 74AHC00 SO14 10.1mW/K |
| K/W | K per watt (kelvin per watt) Thermal resistance — same meaning as ℃/W | 2N7002 350K/W |
| nC | nanocoulomb — the charge needed to turn a FET on (Qg) | AO3400A Qg 6nC — the smaller, the faster it turns on and off |
| A/μs · A/ms | amps per microsecond · amps per millisecond How many A the current changes in 1μs (di/dt) | 2N7002 diode test condition dIS/dt −100A/μs |
| mJ | millijoule — ability to withstand instantaneous energy (avalanche energy) | TIP120 50mJ |
| ns/V | nanoseconds per volt Time allowed for the input signal to rise by 1V (input rise/fall rate) | 74HC00 max. 139ns/V at VCC 4.5V |
| ±kV | plus-minus kilovolts Voltage withstood against static electricity (ESD) | MAX3440E family ±15kV |
| Unit | How to read · Meaning | Datasheet example |
|---|---|---|
| MHz (clock) | megahertz How many million times per second the MCU operates | STM32F103 72MHz · F407 168MHz |
| DMIPS | D-MIPS (dee-mips) Processing speed score (based on the Dhrystone benchmark, instructions processed per second) | STM32F407 210DMIPS · 1.25DMIPS/MHz |
| μA/MHz | microamps per megahertz Supply current per 1MHz of clock — used to compare low-power MCUs | Run mode current of low-power families such as STM32L |
| bit (resolution) | bits (twelve-bit) How many steps the ADC divides a value into — 12bit = 4096 steps | STM32 12bit ADC |
| Msps · ksps | mega-S-P-S · kilo-S-P-S (megasamples · kilosamples per second) How many million or thousand measurements per second (sampling rate) | STM32C011 ADC 2.5Msps |
| LSB | L-S-B The smallest single step of an ADC — errors are given as "how many steps" | STM32C011 ±2LSB (12bit, one step about 0.8mV at 3.3V) |
| ENOB | E-NOB (E-N-O-B) Number of effective bits actually usable | Even a 12bit ADC has a lower ENOB — check the ENOB item in the datasheet |
| Mbit/s · kbit/s | megabits per second · kilobits per second Communication speed (same as bps) | STM32 SPI · I²C max. speed, MAX485 2.5Mbps |
| mA/V (gm) | milliamps per volt (G-M) Transconductance — the strength of a crystal oscillator circuit | STM32 crystal Gm max. 1.5mA/V |
| μW (Drive level) | microwatt (drive level) Power that may be applied to a crystal | Abracon AB26T max. 1.0μW |
| ps (Jitter) | picosecond (jitter) Time by which a clock signal wobbles — in picoseconds | Abracon ASFL1 RMS 1ps |
For MCUs, a higher MHz does not automatically mean faster; how much work is done at the same clock is compared by DMIPS/MHz. For ADCs, you need to look at LSB error and ENOB along with the bit count (resolution) to know the real precision.
| Notation | How to read | Where used |
|---|---|---|
| mAh | milliamp-hour (M-A-H) Milliampere-hour | Battery capacity — 1000mAh is 1A for 1 hour |
| A²s | ampere-squared seconds (I-squared-T) I²t (fuse melting energy) | Fuse and diode surge withstand |
| lm · mcd | lumen · millicandela | LED brightness |
| nm | nanometer | Light wavelength of LEDs and optical devices — red about 620nm |
| g · mg | gram · milligram | Part weight (end of datasheet) |
| pcs · EA | pieces · E-A (each) Count | Quantity — reel of 3,000pcs |
| Notation | How to read | Meaning | Example |
|---|---|---|---|
| 4R7 | four-R-seven | 4.7 (R is the decimal point) | Resistor 4.7Ω, inductor 4.7μH |
| R10 | R-one-zero | 0.10 | Resistor 0.1Ω (100mΩ) |
| 2K2 | two-K-two | 2.2k (K is both the decimal point and k) | 2.2kΩ |
| 4K7 | four-K-seven | 4.7k | 4.7kΩ |
| 1M0 | one-M-zero (one meg) | 1.0M | 1MΩ |
| 103 | one-oh-three | 10 + three zeros | Resistor 10kΩ, capacitor 10nF |
| 3.3V · 3V3 | three point three volts · three-V-three | 3V3 = 3.3V (V is the decimal point) | Supply labels |
On schematics and PCB silkscreen, a dot can be rubbed off or hard to see, so values are written like 4K7 instead of 4.7k. 3V3 is 3.3V and 1V8 is 1.8V.
| Quantity measured | Unit | Common magnitudes |
|---|---|---|
| Voltage | V | mV · V · kV |
| Current | A | nA · μA · mA · A |
| Resistance | Ω | mΩ · Ω · kΩ · MΩ |
| Capacitance | F | pF · nF · μF |
| Inductance | H | nH · μH · mH |
| Frequency | Hz | kHz · MHz · GHz |
| Power | W | mW · W |
| Temperature | ℃ | ℃ · ℃/W |
| Time | s | ns · μs · ms |
| Ratio | % · ppm | As ± values |
| Length | mm | mm · mil · inch |
| Memory | bit · Byte | Kbit · KB · Mbit · MB |
| Rate of change | ○/○ | %/V · mV/℃ · V/μs · mW/℃ |
| MCU and ADC | DMIPS · sps · LSB | MHz · Msps · ±LSB |
Units and prefixes follow the definitions of the International System of Units (SI), and the example values were checked against the manufacturer datasheets used in earlier Semiconductor Library posts and Today's Part (ST STM32 · Nexperia/NXP 74HC·74AHC · ST L7805CV · TI LM317·LM358·LM2596·TL431 · Maxim MAX485 · Alpha & Omega AO3400A · Nexperia 2N7002·BC817 · TIP120 · Abracon crystals, etc.). Datasheets sometimes use the same symbol slightly differently, so for an actual part, check the symbol definitions in its datasheet.